Power Electronics Design Mastery Hub: Practice Test 2026 | E
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In the context of high-frequency GaN devices, what is the primary limiting factor for achieving optimal switching performance when transitioning from a discrete MOSFET to an integrated GaN FET with integrated gate drive?
When designing a resonant LLC converter utilizing SiC MOSFETs for a high-voltage, high-power application, what is the most critical consideration for the resonant tank design to ensure efficient operation across a wide load range and minimize circulating current at light loads?
In a synchronous buck converter utilizing GaN HEMTs, what is the most significant challenge when implementing a high-frequency (e.g., >1 MHz) operation, particularly concerning the body diode conduction of the low-side switch?
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